Advances in Numerical Methods for Convective Hydrodynamic Model of Semiconductor Devices
نویسندگان
چکیده
The convective hydrodynamic model of semiconductor devices is analyzed employing parallel and stabilized finite element methods. The stabilized finite element method for the two-carrier hydrodynamic equations and the parallel computational model are briefly described. Numerical results are shown for a bipolar transistor. A comparison of drift-diffusion, energy-transport and the hydrodynamic models is presented for a O.lpm channel n+-n-n+ silicon diode.
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